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Q#1
PN Junction Theory
GATE EC 2017
MCQ
+1 mark
-0.33 marks
An Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be . What is the magnitude of the built-in potential of this device?
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| Topic | Questions | Attempted | Correct | |
|---|---|---|---|---|
| Network Analysis | 273 | 0 | 0 | |
| Electronic Devices | 69 | 0 | 0 | |
| Analog Electronics | 395 | 0 | 0 | |
| Digital Electronics | 351 | 0 | 0 | |
| Signals and Systems | 22 | 0 | 0 | |
| Control Systems | 224 | 0 | 0 | |
| Communication System | 200 | 0 | 0 | |
| EMFT - ECE | 14 | 0 | 0 | |
| Engineering Mathematics | 24 | 0 | 0 | |
| General Aptitude | 30 | 0 | 0 |