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Q#1
PN Junction Theory
GATE EC 2003
MCQ
+2 marks
-0.66 marks
At 300 K, for a diode current of 1mA, a certain germanium diode requires a forward bias of 0.1435V, whereas a certain silicon diode requires a forward bias of 0.718V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
1
5
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