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Q#1
PN Junction Theory
GATE EC 2009
MCQ
+2 marks
-0.66 marks
Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side
Depletion width on the n-side
Depletion width on the p-side
Intrinsic carrier concentration
Thermal voltage = 26 mV
Permittivity of free space
Dielectric constant of silicon = 12
The built-in-potential of the junction
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