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Q#1
PN Junction Theory
GATE EC 2016
MCQ
+2 marks
-0.66 marks
Consider avalanche breakdown in a silicon junction. The n-region is uniformly doped with a donor density. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field . Assume to be independent of. If the built-in voltage of the junction is much smaller than the breakdown voltage, , the relationship between and is given by
= constant
= constant
= constant
= constant
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| Network Analysis | 273 | 0 | 0 | |
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