Login to track your progress, bookmark questions, and view history.
Q#1
PN Junction Theory
GATE EC 2014
MCQ
+2 marks
-0.66 marks
The donor and accepter impurities in an abrupt junction silicon diode are and , respectively. Assume that the intrinsic carrier concentration in silicon at 300 K, and the permittivity of silicon . The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
0.7 V and
0.86 V and
0.7 V and
0.86 V and
Sign in to see the solution
Log in to view the explanation, track your attempts, and keep your progress.
Sign in to Unlock
Login to keep track of your progress with the tool with daily goals, questions preparation and more.
Browse Practice Questions by Chapters / Topics in Browse Practice Questions by Chapters / Topics in GATE Electronics and Communications
Total Questions
Attempted
% Attempted
Correct
% Correct
Login to keep track of your progress with the tool with daily goals, questions preparation and more.
| Topic | Questions | Attempted | Correct | |
|---|---|---|---|---|
| Network Analysis | 273 | 0 | 0 | |
| Electronic Devices | 69 | 0 | 0 | |
| Analog Electronics | 395 | 0 | 0 | |
| Digital Electronics | 351 | 0 | 0 | |
| Signals and Systems | 22 | 0 | 0 | |
| Control Systems | 224 | 0 | 0 | |
| Communication System | 200 | 0 | 0 | |
| EMFT - ECE | 14 | 0 | 0 | |
| Engineering Mathematics | 24 | 0 | 0 | |
| General Aptitude | 30 | 0 | 0 |