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Q#1 Power Semiconductor Devices GATE EE 2020 NAT +1 mark -0 marks

A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode. D, represented approximately as a piecewise linear plot of current vs time at diode turn-off.  is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is

 

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